Semiconductor Engineering

TCAD Simulation Challenges For Gate-All-Around Transistors

The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...
Blockonomi

Synopsys (SNPS) Stock: GaN Device Modeling Deal Extends Atomera Collaboration

Synopsys (SNPS) expands Atomera collaboration to include GaN device modeling using Sentaurus TCAD tools for RF and power ...
Semiconductor Engineering

Artificial Neural Network (ANN)-Based Model To Evaluate The Characteristics of A Nanosheet FET (NSFET)

This new technical paper titled “Machine-Learning-Based Compact Modeling for Sub-3-nm-Node Emerging Transistors” was published by researchers at SungKyunKwan University, Korea. “In this paper, we ...
EDN

Sentaurus Extends TCAD Physical Modeling

Synopsys has announced the availability of its Sentaurus Technology CAD (TCAD) tool suite, which now combines core TCAD products for multidimensional process, device, and system simulation into a ...
EDN

Tool suite ‘lays foundation’ for extending TCAD to DFM

SAN FRANCISCO — Synopsys Inc. Monday (Oct. 17) introduced a new TCAD tool suite that integrates features of former Technology Modeling Associates (TMA) and Integrated Systems Engineering (ISE) ...