DUBLIN--(BUSINESS WIRE)--The "GaN-on-Sapphire HEMT Power IC by Power Integrations" report has been added to ResearchAndMarkets.com's offering. The report provides an estimation of the production costs ...
CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener ...
SEOUL, South Korea, Sept. 11, 2025 /PRNewswire/ -- DB HiTek, a leading 8-inch specialty foundry, today announced it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride ...
GENEVA, SWITZERLAND, April 1, 2026 / EINPresswire.com / — STMicroelectronics has announced two new high-speed half-bridge gate drivers that bring gallium-nitride (GaN) efficiency, thermal performance, ...
Kawasaki, Japan, Dec. 09, 2003 — Fujitsu Laboratories Ltd. today announced that it has developed a gallium nitride (GaN) high electron mobility transistor (HEMT) amplifier which achieves the world's ...
Innoscience has brought out a range of 650V E-mode GaN HEMT devices. New 190mΩ, 350mΩ and 600mΩ R DS(on) devices in industry-standard 8×8 and 5×6 DFN packages join previously-announced 140mΩ, 240mΩ ...
Infineon Technologies has announced a rad-hardened GaN transistor designed to operate in harsh space environments. It “is the first in-house manufactured GaN transistor to earn the highest quality ...
Electric vehicles, converters for charging infrastructure, energy storage systems, solar and wind power plants or new types of heat pumps — key technologies for the energy transition rely on ...
The lateral structure is currently the most widely used of the various GaN transistor structures. High-electron–mobility transistors (HEMTs) made of gallium nitride are lateral devices that use a ...
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